期刊
IEEE PHOTONICS TECHNOLOGY LETTERS
卷 18, 期 5-8, 页码 938-940出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LPT.2006.873567
关键词
equivalent-circuit model; high-power photodiode; optical receivers; photodiode
In this letter, we developed an analytical equivalent circuit model, which includes the resistance-capacitance-delay time and carrier transport time, to investigate the distinct dynamic performance of the near-ballistic uni-traveling-carrier photodiode (NBUTC-PD). This device, in which the structure of the collector of the UTGPD is modified, can achieve excellent performance at a 1.55-mu m wavelength. According to the measured frequency responses of the scattering (S) parameters of NBUTC-PD and detailed device-modeling, the observed significant reduction of the device capacitance and the enhancement of the net optical-to-electrical bandwidth under high-power operation can be attributed to the unique near-ballistic-transport property of the photogenerated electron, which has never been observed in the traditional high-speed high-power photodiode.
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