Ultrafast recombination in Si-doped InN

We report femtosecond near-infrared transient photoreflection measurements of native n-type indium nitride and silicon-doped indium nitride thin films. The overall time dependence of the ultrafast reflectivity transient is characterized by the different time scales of carrier cooling and carrier recombination. Experimental analysis demonstrates nonradiative recombination in the picosecond and subpicosecond range as the dominant recombination mechanism at room temperature even at very high carrier concentrations. Silicon-doped InN films exhibit carrier lifetimes as short as 680 fs. (c) 2006 American Institute of Physics.