期刊
PHYSICA B-CONDENSED MATTER
卷 373, 期 2, 页码 313-316出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.physb.2005.12.038
关键词
LaAlO3-delta and Si; p-n heterojunction; electric properties; ferroelectricity; photovoltaic effect
High-quality heterojunctions consisting of n-type amorphous LaAlO3-delta and p-type Si without Si interfacial layer were prepared using a thin film deposition system normally used for laser-molecular beam epitaxy. Good I-V rectifying property, ferroelectricity of interface enhancement and fast photovoltaic effect have been observed in the LaAlO3-delta/Si p-n heterojunctions. We expect that the multifunctional properties of rectification, ferroelectricity and photovoltaic effect should open up new possibilities in device development and other applications. (c) 2005 Elsevier B.V. All rights reserved.
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