期刊
JOURNAL OF COMPUTATIONAL PHYSICS
卷 213, 期 1, 页码 214-238出版社
ACADEMIC PRESS INC ELSEVIER SCIENCE
DOI: 10.1016/j.jcp.2005.08.011
关键词
light emitting diode; group-III nitrides; drift-diffusion model; simulation; finite element methods
One-dimensional drift-diffusion model accounting for the unique properties of group-III nitrides is employed to simulate the carrier transport and radiative/non-radiative recombination of electrons and holes in light emitting diode heterostructures. Mixed finite-element method is used for numerical implementation of the model. The emission spectra are computed via the self-consistent solution of the Schrodinger-Poisson equations with account of complex valence band structure of nitride materials. Simulations of a number of single- and multiple-quantum well blue and ultraviolet light emitting diodes are presented and compared with available observations. Specific features of the Ill-nitride LED operation are considered in terms of modelling. Applicability of the drift-diffusion model to analysis of III-nitride LEDs is proved and still open questions are discussed. (c) 2005 Elsevier Inc. All rights reserved.
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