Metalorganic vapor phase epitaxy grown InGaN/GaN light-emitting diodes on Si(001) substrate

We present GaN-based light emitting diode structures on a Si(001) substrate. The 2.3 mu m thick, crack-free layers were grown by metalorganic vapor phase epitaxy using a high-temperature AlN seed layer and 4 degrees off-oriented substrates. This allows us to grow a flat, fully coalesced, and single crystalline GaN layer on Si(001). For preventing crack formation, four AlN interlayers were inserted in the buffer structure. The optically active layers consist of five-fold InGaN/GaN multiple quantum wells showing a bright electroluminescence at 490 nm at room temperature. The crystallographic structure was analyzed by x-ray diffraction measurements and the optical properties were determined by photo- and electroluminescence.