期刊
PHYSICAL REVIEW LETTERS
卷 96, 期 12, 页码 -出版社
AMERICAN PHYSICAL SOC
DOI: 10.1103/PhysRevLett.96.125505
关键词
-
The first evidence of successful p-type doping of InN is presented. It is shown that InNMg films consist of a p-type bulk region with a thin n-type inversion layer at the surface that prevents electrical contact to the bulk. Capacitance-voltage measurements indicate a net concentration of ionized acceptors below the n-type surface. Irradiation with 2 MeV He+ ions is used to convert the bulk of InNMg from p to n-type, at which point photoluminescence is recovered. The conversion is well explained by a model assuming two parallel conducting layers (the surface and the bulk) in the films.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据