期刊
IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS
卷 53, 期 2, 页码 705-707出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TIE.2006.870882
关键词
EN 61000-3-2 regulations; power-factor correction; silicon carbide devices
Improvements in power electronics are basically the result of research in two main fields, namely: 1) new topologies and 2) new devices. Researchers' efforts to achieve improved topologies are necessarily limited by the characteristics of the devices. As a result, both topologies and devices must move forward jointly and at same time. This letter studies the impact of silicon carbide diodes on a classic structure of power-factor correction-the boost converter.
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