期刊
PHYSICA B-CONDENSED MATTER
卷 376, 期 -, 页码 440-443出版社
ELSEVIER
DOI: 10.1016/j.physb.2005.12.113
关键词
GaN; hydrogen; oxygen; acceptor
We present new photoluminescence (PL) data of deliberately O-doped and Mg-doped GaN layers grown by MOCVD. The combination of these data with positron annihilation spectroscopy (PAS) and SIMS results obtained on the same samples shows a clear correlation of the PL intensity of the acceptor related emissions at 3.466 and 3.27 eV (at 2 K) with O doping. The acceptor is stable upon annealing in N-2 in our highly resistive samples, while it is known be unstable in p-GaN. Our tentative conclusion is that this very commonly occurring acceptor is either a V-Ga-O-H complex or a second configuration of the Mg acceptor containing H. (c) 2005 Elsevier B.V. All rights reserved.
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