期刊
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
卷 45, 期 4B, 页码 3176-3178出版社
JAPAN SOC APPLIED PHYSICS
DOI: 10.1143/JJAP.45.3176
关键词
non-volatile memory; Al2O3; Al-rich; nanoscale thin film; C-V hysteresis
This article describes the fabrication process and capacitance-voltage (C-V) characteristics of a new non-volatile Al2O3 memory with nanoscale thin film deposited by electron-cyclotron-resonance sputtering. Al-rich Al2O3 shows characteristics somewhere between Al and Al2O3 in the refractive index and wet etching rate. C-V characteristics of Al-rich Al2O3 memory show a large hysteresis window due to the Al-rich structure, while there is no hysteresis window in the case of stoichiometric Al2O3. This memory is expected to stay non-volatile for several years or more because the capacitance value after writing and erasing operation remained at most unchanged after 4 h at T = 85 degrees C. Also, another new memory structure comprising SiO2/Al2O3 and the Al-rich Al2O3 structure is proposed, which features increased mobility due to the reduction of electron scattering at the Si/Al2O3 interface.
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