期刊
SENSORS
卷 6, 期 4, 页码 405-419出版社
MDPI
DOI: 10.3390/s6040405
关键词
hotplate; heater metallisation; high-temperature stability; electro-migration; doped silicon; doped metal oxide; antimony doped tin oxide
Micromachined thermal heater platforms offer low electrical power consumption and high modulation speed, i.e. properties which are advantageous for realizing non-dispersive infrared (NDIR) gas- and liquid monitoring systems. In this paper, we report on investigations on silicon-on-insulator (SOI) based infrared (IR) emitter devices heated by employing different kinds of metallic and semiconductor heater materials. Our results clearly reveal the superior high-temperature performance of semiconductor over metallic heater materials. Long-term stable emitter operation in the vicinity of 1300 K could be attained using heavily antimony-doped tin dioxide (SnO2: Sb) heater elements.
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