4.6 Article Proceedings Paper

High-temperature MEMS heater platforms:: Long-term performance of metal and semiconductor heater materials

期刊

SENSORS
卷 6, 期 4, 页码 405-419

出版社

MDPI
DOI: 10.3390/s6040405

关键词

hotplate; heater metallisation; high-temperature stability; electro-migration; doped silicon; doped metal oxide; antimony doped tin oxide

向作者/读者索取更多资源

Micromachined thermal heater platforms offer low electrical power consumption and high modulation speed, i.e. properties which are advantageous for realizing non-dispersive infrared (NDIR) gas- and liquid monitoring systems. In this paper, we report on investigations on silicon-on-insulator (SOI) based infrared (IR) emitter devices heated by employing different kinds of metallic and semiconductor heater materials. Our results clearly reveal the superior high-temperature performance of semiconductor over metallic heater materials. Long-term stable emitter operation in the vicinity of 1300 K could be attained using heavily antimony-doped tin dioxide (SnO2: Sb) heater elements.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.6
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据