期刊
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
卷 45, 期 4B, 页码 3106-3109出版社
INST PURE APPLIED PHYSICS
DOI: 10.1143/JJAP.45.3106
关键词
band-to-band tunneling; kT/q independent; p-channel; subthreshold swing; surface tunnel transistor; tunnel FET; tunneling transistor; SiGe; SOI
Experimental results of p-channel silicon vertical tunnel field-effect transistors down to sub-50 nm channel length are shown. As predicted by two-dimensional simulations, we show that the device on-current is nearly independent of channel length scaling. As the drain current is determined by electrons tunneling from the valence band to the conduction band, we show that mobility does not play any role in determining the device characteristics. Low temperature measurements reveal weak positive temperature coefficient in the transfer characteristics due to the dependence of bandgap on temperature. However, as expected for the silicon devices, low on-current is observed. Thus, we propose a lateral tunnel FET on SiGe-on-insulator with high on-currents and symmetric performance in n-channel as well as p-channel operating modes.
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