期刊
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS
卷 45, 期 12-16, 页码 L444-L446出版社
INST PURE APPLIED PHYSICS
DOI: 10.1143/JJAP.45.L444
关键词
ripple; 4H-SiC; femtosecond laser; ablation
Upon femtosecond pulsed-laser irradiation, periodic structures referred to as ripples were fabricated on the surface of a 4H-SiC single crystal. The periodic structures consisted of two concentric regions in the irradiated spots which were clearly distinguished by the period. Surface morphologies were characterized as a function of energy, accumulation number, and interval of pulses. The difference in the threshold of fine and coarse ripples was identified for the first time. The possible formation mechanisms of these structures were discussed.
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