Electronic transport characteristic of an individual CNx/C nanotube Schottky junction

Electrical transport properties of a Schottky junction consisting of carbon nanotube and nitrogen-doped carbon nanotube were studied. The current-voltage characteristics of the junction exhibited reproducible rectifying behavior which could be explained by the Schottky barrier junction. The barrier height and the ideal factor were determined by fitting the current-voltage characteristics to the generalized diode equation. A near power-law dependence of I similar to V-m was observed, where the exponent m increases with decreasing temperature. This effect can be accounted for by filling of deep traps at lower temperatures. The charge transport in the nanotubes is found to be strongly controlled and limited by the highly defective trap state originated from structural and chemical defects due to the doping of nitrogen in the CNx nanotube part.