期刊
THIN SOLID FILMS
卷 500, 期 1-2, 页码 330-335出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2005.10.088
关键词
tantalum oxide; aluminum oxide; dielectric properties; tunnelling
The dielectric breakdown of thin (d=3-4 nm) aluminium and tantalum oxide films was investigated by means of current voltage plots in metal/insulator/metal systems. Dielectric breakdown field strengths, E-DB, of 0.6 GV m(-1) were found for both oxide types at room temperature. Differences appear in the temperature dependence of EDB. Tantalum oxide films show an unchanged breakdown behaviour for temperatures up to 420 K while aluminium oxide films lose already 80% of their EDB value in the same temperature range. Time-resolved investigations of the electric breakdown revealed intermediate states of both oxide types which were stable for several ins being characterized by an enhanced tunnel current. The breakdown voltage clearly scales with the oxide thickness for both oxide types. (c) 2005 Elsevier B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据