Individual β-Ga2O3 nanowires as solar-blind photodetectors

Individual beta-Ga2O3 nanowires as solar-blind photodetectors are investigated. The detectors show encouraging advantages to 254 nm light. The dark current is on the order of pA. The conductance of the nanowire increases by about three orders of magnitude under 254 nm ultraviolet illumination. The upper limits of the response and recovery time are 0.22 and 0.09 s, respectively. These results indicate that beta-Ga2O3 nanowires have potential applications in realizing future miniaturized solar-blind photodetectors.