期刊
APPLIED SURFACE SCIENCE
卷 252, 期 13, 页码 4672-4677出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.apsusc.2005.07.087
关键词
laser ablation; SiC; transmission electron microscopy
We achieved the growth of cubic silicon carbide (SiC) films on (100)Si substrates by pulsed laser deposition (PLD) at moderate temperatures such as 750 degrees C, from a SiC target in vacuum. The as-deposited films are morphologically and structurally characterized by scanning electron microscopy (SEM), conventional and high-resolution transmission electron microscopy (TEM/HRTEM). The morphology of deposited films is dominated by columns nucleated from a thin nanostructured beta silicon carbide (beta-SiC) interface layer. The combined effects of columnar growth, tilted facets of the emerging columns and the presence of particulates on the film surface, lead to a rather rough surface of the films. (c) 2005 Elsevier B.V. All rights reserved.
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