期刊
MEASUREMENT TECHNIQUES
卷 49, 期 5, 页码 524-528出版社
CONSULTANTS BUREAU/SPRINGER
DOI: 10.1007/s11018-006-0142-4
关键词
MOS sensor; gas analyzer; hydrogen; hydrogen sulfide; nitrogen dioxide
The sensitivity of metal-oxide-semiconductor (MOS) sensors of the Pd-Ta2O5-SiO2-Si type towards hydrogen, hydrogen sulfide and nitrogen dioxide is measured in atmospheres of air, nitrogen, and oxygen. It is demonstrated that MOS sensors are efficient in any chemically noncorrosive gas atmosphere, and also in a vacuum.
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