期刊
IEEE TRANSACTIONS ON NANOTECHNOLOGY
卷 5, 期 3, 页码 237-242出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNANO.2006.874043
关键词
all-laser processing; carbon nanotubes (CNTs); field-effect transistor (FET); laser ablation; nanodevices; nanoelectronics; nanotechnology
We have successfully developed an all-laser processing for the localized growth of suspended single-wall carbon nanotubes (SWCNTs) on prepatterned SiO2/Si substrates. Our all-laser process stands out by its exclusive use of the same KrF excimer laser, first, to, deposit the embedded-catalyst electrodes with a controllable architecture and, second, to grow SWCNTs through the pulsed laser ablation of a pure graphite target. Under the optimal growth conditions, the suspended SWCNTs are shown to bridge laterally adjacent electrodes separated by a gap of similar to 2 mu m. These SWCNTs (having diameters in the 1.25-1.64-nm range) generally tend to auto-assemble into bundles of similar to 5-15 nm in diameter. The all-laser process here developed offers the advantage of a direct integration of the SWCNTs into field-effect-transistor-like devices with no postprocessing, thereby permitting the investigation of their electrical transport properties. Thus, the suspended SWCNT bundles are shown to behave collectively as an ambipolar transistor with ON/OFF switching ratios as high as similar to 10(4).
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据