Nanoscale n-channel and ambipolar organic field-effect transistors

N-channel and ambipolar organic field-effect transistors (OFETs) with a few tens of nanometer channel length were fabricated and characterized. N,N-'-bis(n-octyl)-dicyanoperylene-3,4:9,10-bis(dicarboximide) (PDI-8CN(2)) was employed as the active semiconductor and yielded a linear regime electron mobility of 2.3x10(-3) cm(2)/V s at 5x10(5) V/cm in an OFET with channel length of 15 nm. An ambipolar heterostructure transistor consisting of thin layers of PDI-8CN(2) and pentacene was fabricated with channel length of about 23 nm. Field-effect hole and electron mobilities of 9.2x10(-3) and 4.0x10(-3) cm(2)/V s, respectively, are obtained at 5x10(5) V/cm. These results represent the shortest channel length n-channel and ambipolar organic transistors that have been fabricated. (c) 2006 American Institute of Physics.