Crystalline properties of wide band gap BeZnO films

The crystalline properties of Be substituted ZnO (BeZnO) films deposited on c-Al2O3 substrates are studied. As Be concentration in BeZnO increases, the lattice parameters of BeZnO increases; the c-axis lattice is more sensitively shifted than the a-axis lattice. The energy band gap of the BeZnO films has been efficiently modulated from 3.38 eV to 3.81 eV by adding Be into ZnO. A linear dependency between band gap and lattice parameters is observed from BeZnO films. BeZnO alloys can be used for new ZnO-based devices based on double heterostructures, quantum wells, or superlattices made with ZnO and BeZnO. (C) 2006 American Institute of Physics.