期刊
JOURNAL OF ELECTRONIC MATERIALS
卷 35, 期 5, 页码 1133-1137出版社
MINERALS METALS MATERIALS SOC
DOI: 10.1007/BF02692577
关键词
GaN; array; patterning
We report on the details of controlled fabrication of highly crystalline gallium nitride (GaN) two-dimensional highly periodic ultradense nanopore and nanopillar arrays by self-assembly nanopatterning. Nanopore synthesis relies on the use of anodized alumina oxide template as a mask for dry etching of GaN top surface using chlorine gas. The inverse patterning is accomplished by site-selective deposition of metal nanodot array by e-beam evaporation of Ni through the pores of the template; after which the template is removed and dry etching is performed. The formed patterns demonstrate an excellent hexagonal order and uniformity according to fast Fourier transformation performed. The presented approach is robust, highly reproducible, and technically undemanding. Moreover, unreduced crystallinity of the produced nanopillars and nanopores was confirmed with Raman measurements, which suggests their possible use as future substrates for engineering advanced nano-optoelectronic devices and sensors.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据