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Enhanced hole transport in C60-doped hole transport layer

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APPLIED PHYSICS LETTERS
卷 88, 期 18, 页码 -

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AMER INST PHYSICS
DOI: 10.1063/1.2172296

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The carrier mobility of C60-doped hole transport layer was investigated according to the C60 content. The addition of C60 in the 1, 3, 5-tris (N, N-bis-(4,5-methoxyphenyl)-aminophenyl) benzol (TDAPB) hole transport material resulted in the increase of hole mobility of TDAPB. The C60 molecule acted as a p-type dopant in the hole transport layer, resulting in the improved hole transport in TDAPB. The hole mobility of C60-doped TDAPB was 9.0x10(-4) cm(2)/Vs compared with 1.0x10(-4) cm(2)/Vs for nondoped TDAPB.

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