期刊
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
卷 45, 期 5A, 页码 3955-3958出版社
JAPAN SOC APPLIED PHYSICS
DOI: 10.1143/JJAP.45.3955
关键词
phase-change; random access memory; temperature dependence; GeSbTe; set/reset resistance; I-V curve; threshold voltage
The temperature dependences of phase-change random access memory (PCRAM) cells oil different Ge-Sb-Te phase-change recording materials are studied and compared. A Ge2Sb2Te5 phase-change film has a larger resistance margin and a higher thermal stability than Ge1Sb2Te4 and Ge1Sb4Te7 films. The set resistance, reset resistance, resistance margin and threshold voltage of PCRAM cells decrease with increasing temperature. A Ge2Sb2Te5 PCRAM cell has a higher thermal stability of threshold voltage than Ge1Sb2Te4 and Ge1Sb4Te7 PCRAM cells.
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