期刊
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
卷 45, 期 5B, 页码 4303-4308出版社
JAPAN SOC APPLIED PHYSICS
DOI: 10.1143/JJAP.45.4303
关键词
flexible TFT; amorphous oxide semiconductor; materials design; In2O3-Ga2O3-ZnO; electrical properties
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