Radiative transitions of layered semiconductor GaS doped with P

Photolurninescence (PL) measurement has been made on P-doped p-GaS. The 2.35 and 2.12eV emission bands are observed in the PL spectrum of P-doped sample at 77 K. The temperature dependence of full-width at half-maximum and the shape of the PL spectrum of the 2.12 eV emission band are characterized by the recombination mechanism of the configurational coordinate model. It is found that the 2.12eV emission band is related to the complex center of vacancy and acceptor due to P atoms. It is found from the presence of the complex center that the P-doped samples include a high concentration of defects or defect complexes. (c) 2005 Elsevier B.V. All rights reserved.