期刊
ELECTRONICS LETTERS
卷 42, 期 10, 页码 601-603出版社
INST ENGINEERING TECHNOLOGY-IET
DOI: 10.1049/el:20060295
关键词
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Electrical injection lasing has been verified for GaP-based broad-area Ga(NAsP)/GaP single-quantum-well heterostructures near room temperature for the first time. The lasers have been grown by metal organic vapour phase epitaxy. Owing to the comparable lattice constants of this novel material system to that of Si, this novel dilute nitride III/V laser material might be applied for optoelectronic devices integrated to Si microelectronics in the future.
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