期刊
PHYSICAL REVIEW LETTERS
卷 96, 期 18, 页码 -出版社
AMERICAN PHYSICAL SOC
DOI: 10.1103/PhysRevLett.96.187402
关键词
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Excitation of an n-type GaAs layer by intense ultrashort terahertz pulses causes coherent emission at 2 THz. Phase-resolved nonlinear propagation experiments show a picosecond decay of the emitted field, despite the ultrafast carrier-carrier scattering at a sample temperature of 300 K. While the linear THz response is in agreement with the Drude response of free electrons, the nonlinear response is dominated by the super-radiant decay of optically inverted impurity transitions. A quantum mechanical discrete state model using the potential of the disordered impurities accounts for all experimental observations.
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