期刊
NANOTECHNOLOGY
卷 17, 期 9, 页码 2381-2385出版社
IOP Publishing Ltd
DOI: 10.1088/0957-4484/17/9/051
关键词
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At reduced dimensionality, Coulomb interactions play a crucial role in determining device properties. While such interactions within the same carbon nanotube have been shown to have unexpected properties, device integration and multi-nanotube devices require the consideration of inter-nanotube interactions. We present calculations of the characteristics of planar carbon nanotube transistors including interactions between semiconducting nanotubes and between semiconducting and metallic nanotubes. The results indicate that inter-tube interactions affect both the channel behaviour and the contacts. For long channel devices, a separation of the order of the gate oxide thickness is necessary to eliminate inter-nanotube effects. Because of an exponential dependence of this length scale on the dielectric constant, very high device densities are possible by using high-kappa dielectrics and embedded contacts.
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