Effect of uniaxial stress on excitons in a self-assembled quantum dot

The fine structure of the neutral exciton in a single self-assembled InGaAs quantum dot is investigated under the effect of an applied uniaxial stress. The spectrum of the excitonic Rayleigh scattering was measured in reflectivity using high-resolution laser spectroscopy while the sample was submitted to a tunable uniaxial stress along its [110] crystal axis. We show that using this stretching technique, the quantum dot potential is elastically deformable such that the exciton fine structure splitting can be substantially reduced.