期刊
ADVANCED FUNCTIONAL MATERIALS
卷 16, 期 8, 页码 1075-1080出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.200500443
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The performance of organic electronic devices is often limited by injection. In this paper, improvement of hole injection in organic electronic devices by conditioning of the interface between the hole-conducting layer (buffer layer) and the active organic semiconductor layer is demonstrated. The conditioning is performed by spin-coating poly(9,9-dioctyl-fluorene-co-N(4-butylphenyt)-diphenylamine) (TFB) on top of the poly(3,4-ethylene dioxythiophene): poly(styrene sulfonate) (PEDOT-PSS) buffer layer, followed by an organic solvent wash, which results in a TFB residue on the surface of the PEDOT.PSS. Changes in the hole-injection energy barriers, bulk charge-transport properties, and current-voltage characteristics observed in a representative PFO-based (PFO: poly(9,9-dioctyifluorene)) diode suggest that conditioning of PEDOT.PSS surface with TFB creates a stepped electronic profile that dramatically improves the hole-injection properties of organic electronic devices.
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