ZnO thin-film transistors with polycrystalline (Ba,Sr)TiO3 gate insulators

The electrical characteristics of ZnO thin-film transistors with high-k (Ba,Sr)TiO3 gate dielectrics are presented. The ZnO and (Ba,Sr)TiO3 thin films were deposited on Pt, exhibiting polycrystalline characteristics. The thin-film devices demonstrated transistor behavior over the range of 0-10 V with a stable threshold voltage of approximately 1.2 V. The field effect mobility, subthreshold slope, and on/off ratio were measured to be 2.3 cm(2) V-1 s(-1), 0.25 V/decade, and 1.5x10(8), respectively. The measured transistor performance characteristics suggest that ZnO/(Ba,Sr)TiO3 structures are well suited for both polycrystalline thin-film transistors for display applications and future higher performance transistors based on single crystal ZnO. (c) 2006 American Institute of Physics.