Growth and characterization of AlInN ternary alloys in whole composition range and fabrication of InN/AlInN multiple quantum wells by RF molecular beam epitaxy

We studied on rf molecular beam epitaxy (RF-MBE) growth of AIInN ternary alloys on N-polarity GaN templates. The growable highest temperature for the AIInN ternary alloy with mid-composition range was about 600 degrees C, which was very similar to that of N-polarity InN epitaxy. The compositional and structural qualities of AIInN ternary alloys were quite poor, however, for growth temperatures above 580 degrees C. AIInN ternary alloys without apparent phase separation in the whole composition range could be grown at 550 degrees C, and their crystalline, electrical, and optical properties were characterized. The bowing parameter for the optical bandgap of AIInN ternary alloys was found to be 4.96 +/- 0.28 eV. Further we for the first time fabricated InN/AIInN multiple quantum wells (MQWs).