期刊
JOURNAL OF MICROELECTROMECHANICAL SYSTEMS
卷 15, 期 3, 页码 717-728出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JMEMS.2006.876796
关键词
electroosmotic pump; porous silicon membrane; zeta potential
N-type porous silicon can be used to realize electroosmotic pumps with high flow rates per applied potential difference. The porosity and pore size of porous silicon membranes can be turned, the pore geometry has near-unity tortuosity, and membranes can be made thin and with integrated support structures. The size of hexagonally packed pores is modified by low-pressure chemical vapor deposition (LPCVD) polysilicon deposition, followed by wet oxidation of the polysilicon layer, resulting in a pore radius varying from 1 to 3 mu m. Pumping performance of these vices is experimentally studied as a function of pore size and compared with theory. These 350-mu m-thick silicon membranes exbit a maximum flow rate per applied field of 0.13 ml/min/cm(2)/V. his figure of merit is five times larger than previously demonstrated porous glass EO pumps.
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