期刊
IEEE ELECTRON DEVICE LETTERS
卷 27, 期 6, 页码 428-430出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2006.874761
关键词
enhancement mode (E-mode); GaN; high electron mobility transistor (HEMT); millimeter-wave frequencies
Enhancement-mode AlGaN/GaN high electron-mobility transistors have been fabricated with a gate length of 160 run. The use of gate recess combined with a fluorine-based surface treatment under the gate produced devices with a threshold voltage of +0.1 V. The combination of very high transconductance (> 400 mS/mm) and low gate leakage allows unprecedented output current levels in excess of 1.2 A/mm. The small signal performance of these enhancement-mode devices shows a record current cutoff frequency (f(T)) of 85 GHz and a power gain cutoff frequency (f(max)) of 150 GHz.
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