4.5 Article

Wafer-level packaging based on uniquely orienting self-assembly (The DUO-SPASS processes)

期刊

JOURNAL OF MICROELECTROMECHANICAL SYSTEMS
卷 15, 期 3, 页码 531-540

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JMEMS.2006.876790

关键词

self-organizing parallel assembly (SPASS) process; two-stage shape recognition; uniquely orienting self-assembly; wafer-level packaging

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A wafer-level packaging strategy for micro device chips based on uniquely orienting self-assembly is presented with the following steps: 1) bulk parts are uniquely face-oriented and spread in a single layer; 2) parts are palletized onto an alignment template having an array of receptor sites; 3) parts are anchored one-to-one to the receptor sites; 4) each anchored part is fixed to a unique in-plane orientation. We demonstrate all of these steps with two different self-organizing parallel assembly (SPASS) processes: a semidry uniquely orienting process (semi-DUO-SPASS) and a dry uniquely orienting (DUO-SPASS) process. The semidry process exploits: 1) an agitated air/water interface to uniquely face-orient bulk parts having a single hydrophobic face; 2) a hydrophobic carrier wafer to palletize the parts in an air environment; 3) orbital shaking to drive the parts until they are anchored to receptor sites; 4) gravity to uniquely align the parts. Experiments show that 2-mm square silicon parts are correctly registered on a 4-in alignment template having 164 receptor sites with a defect rate of similar to 1% after 3 min orbital shaking. The dry process utilizes: 1) asymmetry in dynamic stability to uniquely face-orient bulk parts having protruding features on one face; 2) orbital shaking to drive the parts until they are first anchored to receptor sites and then fixed in well-defined in-plane orientations by two-stage shape recognition. In our experiments, 1-mm square silicon parts are assembled with a defect rate of similar to 2% in 10 min on each of two 4-in alignment templates having, respectively, 397 and 720 receptor sites.

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