期刊
PHYSICAL REVIEW B
卷 73, 期 22, 页码 -出版社
AMERICAN PHYSICAL SOC
DOI: 10.1103/PhysRevB.73.224521
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The lateral conductivity of the middle Al layer of a Nb/Al/AlOx/Al/AlOx/Al/Nb (SINIS) multiterminal device is studied as a function of the current injected perpendicular to the layers in a regime where a gap-difference-like feature is observed in the current-voltage characteristic. The response of the Al layer does not confirm an earlier reported observation of superconductivity in the Al far above its transition temperature [Blamire , Phys. Rev. Lett. 66, 220 (1991)].
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