Band diagrams of BaSi2/Si structure by Kelvin probe and current-voltage characteristics

The band diagrams of the BaSi2/Si heterostructure were investigated using a Kelvin probe and its current-voltage (I-V) characteristics. Ga-doped n-type degenerate BaSi2 was grown on Si(111) by molecular beam epitaxy (MBE), and its work function, which is almost the same as its electron affinity, was evaluated to be approximately 3.2eV by a Kelvin probe. A distinct rectifying behavior was observed in the I-V characteristics of isotype n-BaSi2/n-Si diodes due to an energy barrier for electrons traversing from n-Si to n-BaSi2.