期刊
JOURNAL OF ELECTRONIC MATERIALS
卷 35, 期 6, 页码 1231-1236出版社
MINERALS METALS MATERIALS SOC
DOI: 10.1007/s11664-006-0246-2
关键词
HgCdTe; molecular beam epitaxy (MBE); Ge substrates; megapixel; focal plane array (FPA); infrared (IR) detectors
The Leti-Lir has studied II-VI compounds for infrared (IR) detection for more than 20 years. The need to reduce the production cost of IR focal plane arrays (FPAs) sparked the development of heteroepitaxy on large-area substrates. Germanium has been chosen as the heterosubstrate for the third generation of IR detectors. First, we report on the progress achieved in HgCdTe growth on 3-in. and 4-in. (211)B CdTe/Ge. Then, we discuss the choice of a new machine for larger size and better homogeneity. Finally, we present the latest results on third-generation IR multicolor and megapixel devices. First-time results regarding a middle wavelength infrared (MWIR) dual-band FPA, with a reduced pitch of 25 mu m, and a MWIR 1,280 x 1,024 FPA will be shown. Both detectors are based on molecular beam epitaxy (MBE)-grown HgCdTe on Ge. The results shown validate the choice of Ge as the substrate for third-generation detectors.
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