期刊
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
卷 45, 期 6B, 页码 5501-5503出版社
INST PURE APPLIED PHYSICS
DOI: 10.1143/JJAP.45.5501
关键词
carbon nanotube; field-effect transistor; hysteresis; passivation
have statistically studied the suppression of hysteresis in carbon nanotube field-effect transistors. The effect of the device fabrication process on the hysteresis has been investigated. The results show that contamination induced by the fabrication process impedes the suppression of hysteresis in device passivation. To remove the contamination, we have introduced a cleaning process as a treatment before passivation. The effectiveness of passivation with polymethylmetacrylate has been improved by the cleaning process using H2SO4/H2O2 solution.
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