Light-emitting Si-rich silicon nitride (SRN) films were fabricated by plasma enhanced chemical vapor deposition followed by thermal annealing and the SRN. external quantum efficiency was measured. The SRN light emission temperature dependence and recombination dynamics were also studied. Small emission thermal quenching from 4, to 330 K with wavelength dependent, nanosecond recombination lifetime was observed. Light emission from SRN systems can provide alternative routes towards the fabrication of efficient Si-based optical devices. (c) 2006 American Institute of Physics.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据