期刊
NANOTECHNOLOGY
卷 17, 期 11, 页码 S338-S343出版社
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/17/11/S18
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Materials capable of highly efficient, direct thermal-to-electric energy conversion would have substantial economic potential. Theory predicts that thermoelectric efficiencies approaching the Carnot limit can be achieved at low temperatures in one-dimensional conductors that contain an energy filter such as a double-barrier resonant tunnelling structure. The recent advances in growth techniques suggest that such devices can now be realized in heterostructured, semiconductor nanowires. Here we propose specific structural parameters for InAs/InP nanowires that may allow the experimental observation of near-Carnot efficient thermoelectric energy conversion in a single nanowire at low temperature.
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