期刊
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
卷 130, 期 1-3, 页码 228-236出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.mseb.2006.03.015
关键词
nanocrystalline silicon; laser nanoforming; polycrystalline silicon; SEM; Raman spectroscopy
Reduced melting temperature of nanoparticles is utilized to deposit thin polycrystalline silicon (c-Si) films on plastic substrates by using a laser beam without damaging the substrate. An aqueous dispersion of 5 nm silicon nanoparticles was used as precursor. A Nd:YAG (1064 nm wavelength) laser operating in continuous wave (CW) mode was used for thin film formation. Polycrystalline Si films were deposited on flexible as well as rigid plastic substrates in both air and argon ambients. The films were analyzed by optical microscopy for film formation, scanning electron microscopy (SEM) for microstructural features, energy dispersive spectroscopy (EDS) for impurities, X-ray photoelectron spectroscopy (XPS) for composition and bond information of the recrystallized film and Raman spectroscopy for estimating shift from amorphous to more crystalline phase. Raman spectroscopy showed a shift from amorphous to more crystalline phases with increasing both the laser power and irradiation time during laser recrystallization step. (c) 2006 Elsevier B.V. All rights reserved.
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