期刊
JOURNAL OF NON-CRYSTALLINE SOLIDS
卷 352, 期 9-20, 页码 1217-1220出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jnoncrysol.2005.10.046
关键词
amorphous semiconductors; silicon; solar cells; heterojunctions; photovoltaics; band structure; defects
We have investigated PECVD-deposited ultrathin intrinsic a-Si:H layers on c-Si substrates using UY-excited photoemission spectroscopy (hv = 4-8 eV) and surface photovoltage measurements. For samples deposited at 230 degrees C, the Urbach energy is minimal, the Fermi level closest to midgap and the interface recombination velocity has a minimum. The a-Si:H/c-Si interface density of states is comparable to that of thermally oxidized silicon interfaces. However, the measured a-Si:H dangling bond densities are generally higher than in thick films and not correlated with the Urbach energy. This is ascribed to additional disorder induced by the proximity of the a-Si:H/c-Si interface and H-rich growth in the film/substrate interface region. (c) 2006 Elsevier B.V. All rights reserved.
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