Digital lithography for large-area electronics on flexible substrates

Hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) were fabricated at growth temperatures no greater than 150 degrees C. The transistor device performance was comparable to conventional high-temperature processed devices. Typical field-effect mobility for these low-temperature devices were similar to 1 cm(2)/V s, on-off ratios of > 10(8) and sub-threshold slopes of 0.5 V/decade were measured. The low-temperature process allowed the integration of the TFTs with flexible polymeric substrates. Device fabrication for these devices was performed using jet-printed etch masks in place of photolithography. The devices fabricated on the flexible substrates using jet printing were comparable to devices fabricated on glass. (c) 2006 Published by Elsevier B.V.