期刊
JOURNAL OF NON-CRYSTALLINE SOLIDS
卷 352, 期 9-20, 页码 1152-1155出版社
ELSEVIER
DOI: 10.1016/j.jnoncrysol.2005.10.044
关键词
nanocrystals
This paper presents the results of photoluminescence, its temperature dependence and Raman scattering investigations on magnetron co-sputtered silicon oxide films with (or without) embedded Si (or Ge) nanocrystallites. It is shown the oxide related defect origin of the visible PL centers peaked at 1.7, 2.06 and 2.30 eV. The infrared PL band centered at 1.44-1.58 eV in Si-SiOx, system has been analyzed within a quantum confinement PL model. Comparative PL investigation of Ge-SiOx system has confirmed that high energy visible PL bands (1.60-1.70 and 2.30 eV) are connected with oxide related defects in SiOx. The PL band in the spectral range of 0.75-0.85 eV in Ge-SiOx system is attributed to exciton recombination inside of Ge NCs. (c) 2006 Elsevier B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据