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Strain-free polarization superlattice in silicon carbide: A theoretical investigation

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PHYSICAL REVIEW LETTERS
卷 96, 期 23, 页码 -

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AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.96.236803

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A strain-free superlattice of inversion domains along the hexagonal axis of SiC is investigated by theoretical calculations. The induced polarization causes a zigzag shape in the band edges, leading to spatial separation of photoexcited carriers and to an effective band gap narrowing tunable over a wide range by the geometry and on a smaller scale by the intensity of the excitation. Calculations on the SiC surface indicate that preparation of such a superlattice might be possible in atomic layer epitaxy with properly chosen sources and temperatures.

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