Low resistivity p-ZnO films fabricated by sol-gel spin coating

N-doped and In-N-codoped ZnO films were fabricated on quartz glass substrate by sol-gel spin coating. Their p-type conductivities were characterized by the Hall measurements, revealing low resistivities of the order of 10(-1) Omega cm. Thin-film junctions comprising an undoped ZnO layer and a N-doped ZnO layer displayed the typical rectifying characteristics, suggesting formation of p-n homojunctions at the interfaces. (c) 2006 American Institute of Physics.