期刊
ELECTRONICS LETTERS
卷 42, 期 13, 页码 779-780出版社
INSTITUTION ENGINEERING TECHNOLOGY-IET
DOI: 10.1049/el:20060768
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DC and RF measurements of an emerging AIInN/GaN high electron mobility transistor (HEMT) technology for power performances are reported. High electron transport properties in this structure attributed to the material quality are demonstrated. Indeed, in spite of a basic technology which provides high access resistances, high frequency performances with a cutoff and maximum oscillation frequencies about 26 and 40 GHz, respectively, at V-DS = 10 V were achieved. A maximum drain current density more than 1.3 A/mm with a pinch-off breakdown voltage about 40 V without any passivation was obtained. These results show that this device is very promising for high power performances at high frequency.
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