期刊
PHYSICAL REVIEW LETTERS
卷 96, 期 24, 页码 -出版社
AMERICAN PHYSICAL SOC
DOI: 10.1103/PhysRevLett.96.246403
关键词
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We have extensively studied the carrier transport in regio-regular polythiophene field-effect transistors (FETs) from room temperature to 4.2 K. At low temperatures, Zabrodskii plots (dln sigma/dlnT) demonstrate that the gate voltage and source-drain voltage combine to induce the insulator-to-metal transition at a carrier density of 5x10(12) cm(-2). The carrier transport in the insulating regime is well described by phonon assisted hopping in a disordered Fermi glass with Coulomb interaction between the hopping charge carrier and the opposite charge left behind, as described by Efros and Shklovskii.
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