Switching in C60-fullerene based field effect transistors

We are reporting on the electrical properties of a bottom gate C-60-fullerene based n-channel organic field effect transistor. The C-60 thin film was epitaxially grown using hot wall epitaxy on top of an organic dielectric divinyltetramethyldisiloxane-bis(benzocyclobutene). The device performance depends on the growth parameters during the C-60 film growth. Optimization of the growth parameters leads to a C-60 film of a low total number of traps, and the drain-source current is increased by two orders in magnitude. We propose that the high current-densities are caused by space charge limited currents beside the gate induced space charge.